Enhancement Performance of High Electron Mobility Transistor (HEMT) Based on Dimensions Downscaling

Abdul-kadir, Firas Natheer and Jamil, Nawfal Y. and Al Taan, Laith M. and Abdullah, Waheb (2023) Enhancement Performance of High Electron Mobility Transistor (HEMT) Based on Dimensions Downscaling. International Journal of Electrical and Electronic Engineering & Telecommunications. IJEETC. ISSN 2319-2518

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Abstract

This paper aims to enhance the performance of the High Electron Mobility Transistor (HEMT) according to downscaling dimensions based on the electrical properties and semiconductor materials (GaN, Si3N4, ALGaN and Si). This is to solve difficulties with reducing dimensions and ensuring HEMT has the highest performance possible. This goal was met when the physical scaling restrictions of channel diameters for different HEMTs were concurrently shrunk without compromising their performance. A simula-tion study was done using four variable factors (length, width, of the channel and length, width of the source and drain). Three electrical characteristics were used to assess the impact of altering dimensions on the performance of each kind of HEMT: threshold voltage Vt, ON-state/OFF-state current (ION/IOFF) ratio, and transconductance gm. To conduct experimental simulations under the specified situation, the well-known Silvaco TCAD simulation tool was used. The acquired simulation results revealed that the optimum performance for the downscaling device was achieved at the channel length of 1.6μm, the channel width of 0.3μm, the length of source and drain is 0.4μm and finally the width of source and drain is 0.05 μm.

Item Type: Article
Dates:
DateEvent
16 March 2023Accepted
1 June 2023Published Online
Uncontrolled Keywords: GaN, HEMT, channel length, downscaling, current gain
Subjects: CAH10 - engineering and technology > CAH10-01 - engineering > CAH10-01-08 - electrical and electronic engineering
Divisions: Faculty of Computing, Engineering and the Built Environment > School of Engineering and the Built Environment > Dept. of Engineering
Depositing User: Waheb Abdullah
Date Deposited: 22 Jun 2023 10:47
Last Modified: 22 Jun 2023 10:47
URI: https://www.open-access.bcu.ac.uk/id/eprint/14480

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